1

Lattice expansion of Bi2Te3 from 4.2 K to 600 K

Year:
1974
Language:
english
File:
PDF, 125 KB
english, 1974
2

Resistivity of Bi2Te3 from 1.3 K to 300 K

Year:
1974
Language:
english
File:
PDF, 142 KB
english, 1974
3

A study of insulator materials used in ISFET gates

Year:
1978
Language:
english
File:
PDF, 266 KB
english, 1978
4

Preparation and characteristics of ZnSnP2

Year:
1968
Language:
english
File:
PDF, 452 KB
english, 1968
5

De Haas-Van Alphen effect in n-type Bi2Te3

Year:
1965
Language:
english
File:
PDF, 145 KB
english, 1965
6

Preparation and characteristics of ZnSnP2

Year:
1967
Language:
english
File:
PDF, 424 KB
english, 1967
7

Concentration dependence of De Haas-Van Alphen effect in n-type Bi2Te3

Year:
1967
Language:
english
File:
PDF, 146 KB
english, 1967
8

Specific heat of n-type Bi2Te3 from 1.3 to 90 °K

Year:
1968
Language:
english
File:
PDF, 140 KB
english, 1968
9

Magnetoresistance of n-type Bi2Te3

Year:
1969
Language:
english
File:
PDF, 131 KB
english, 1969
10

Lattice parameters of n-and p-type Bi2Te3

Year:
1973
Language:
english
File:
PDF, 166 KB
english, 1973
13

Practical limits to the thermoelectric figure of merit—II

Year:
1972
Language:
english
File:
PDF, 972 KB
english, 1972
14

VI-8 a large area high frequency photodiode

Year:
1976
Language:
english
File:
PDF, 342 KB
english, 1976